WMK020N06HG4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMK020N06HG4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 227 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 258 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 2110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm

Encapsulados: TO220

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WMK020N06HG4 datasheet

 ..1. Size:596K  way-on
 wmk020n06hg4.pdf pdf_icon

WMK020N06HG4

WMK020N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WMK020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 60V, I = 25

 9.1. Size:595K  way-on
 wmk023n08hgs.pdf pdf_icon

WMK020N06HG4

WMK023N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMK023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 80V, I = 270A DS

 9.2. Size:618K  way-on
 wmk028n10hgs.pdf pdf_icon

WMK020N06HG4

WMK028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = 257A

 9.3. Size:607K  way-on
 wmk028n10hg2.pdf pdf_icon

WMK020N06HG4

WMK028N10HG2 100V N-Channel Enhancement Mode Power MOSFET Description WMK028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V =100V, I = 2

MOSTRAR MÁS

Otros transistores... WMJ90N60F2, WMJ90N65C4, WMJ90N65F2, WMJ99N60C4, WMJ99N60F2, WMJ9N150D1, WMJ9N90D1B, WML9N90D1B, IRFP260, WMK023N08HGS, WMK028N08HGD, WMK028N10HG2, WMK028N10HGS, WMK030N06HG4, WMK030N06LG4, WMK036N12HGS, WMK037N10HGS