Справочник MOSFET. WMK020N06HG4

 

WMK020N06HG4 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMK020N06HG4
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 227 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 258 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 2110 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0021 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для WMK020N06HG4

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMK020N06HG4 Datasheet (PDF)

 ..1. Size:596K  way-on
 wmk020n06hg4.pdf pdf_icon

WMK020N06HG4

WMK020N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 60V, I = 25

 9.1. Size:595K  way-on
 wmk023n08hgs.pdf pdf_icon

WMK020N06HG4

WMK023N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-220 V = 80V, I = 270A DS

 9.2. Size:618K  way-on
 wmk028n10hgs.pdf pdf_icon

WMK020N06HG4

WMK028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 257A

 9.3. Size:607K  way-on
 wmk028n10hg2.pdf pdf_icon

WMK020N06HG4

WMK028N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V =100V, I = 2

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMJ90N60F2 , WMJ90N65C4 , WMJ90N65F2 , WMJ99N60C4 , WMJ99N60F2 , WMJ9N150D1 , WMJ9N90D1B , WML9N90D1B , 8205A , WMK023N08HGS , WMK028N08HGD , WMK028N10HG2 , WMK028N10HGS , WMK030N06HG4 , WMK030N06LG4 , WMK036N12HGS , WMK037N10HGS .

History: DMN2004DMK | KCB3008A | NP80N04MDG

 

 
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