Справочник MOSFET. WMK020N06HG4

 

WMK020N06HG4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMK020N06HG4
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 227 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3.5 V
   Максимально допустимый постоянный ток стока |Id|: 258 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 102 nC
   Время нарастания (tr): 35 ns
   Выходная емкость (Cd): 2110 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0021 Ohm
   Тип корпуса: TO220

 Аналог (замена) для WMK020N06HG4

 

 

WMK020N06HG4 Datasheet (PDF)

 ..1. Size:596K  way-on
wmk020n06hg4.pdf

WMK020N06HG4
WMK020N06HG4

WMK020N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 60V, I = 25

 9.1. Size:595K  way-on
wmk023n08hgs.pdf

WMK020N06HG4
WMK020N06HG4

WMK023N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-220 V = 80V, I = 270A DS

 9.2. Size:618K  way-on
wmk028n10hgs.pdf

WMK020N06HG4
WMK020N06HG4

WMK028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 257A

 9.3. Size:607K  way-on
wmk028n10hg2.pdf

WMK020N06HG4
WMK020N06HG4

WMK028N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V =100V, I = 2

 9.4. Size:620K  way-on
wmk028n08hgd.pdf

WMK020N06HG4
WMK020N06HG4

WMK028N08HGD 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N08HGD uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 80V, I = 167A

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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