FDP8896 Todos los transistores

 

FDP8896 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDP8896
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 92 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0059 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET FDP8896

 

FDP8896 Datasheet (PDF)

 ..1. Size:470K  fairchild semi
fdp8896.pdf

FDP8896
FDP8896

NMay 2008tmMFDP8896N-Channel PowerTrench MOSFET30V, 92A, 5.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 7.0m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized f

 ..2. Size:519K  onsemi
fdp8896.pdf

FDP8896
FDP8896

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:284K  inchange semiconductor
fdp8896.pdf

FDP8896
FDP8896

isc N-Channel MOSFET Transistor FDP8896FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 59m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 9.1. Size:308K  fairchild semi
fdp8876.pdf

FDP8896
FDP8896

November 2005FDP8876N-Channel PowerTrench MOSFET 30V, 71A, 8.5mGeneral Descriptions Features rDS(ON) = 8.5m, VGS = 10V, ID = 40AThis N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m, VGS = 4.5V, ID = 40Aimprove the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventiona

 9.2. Size:469K  fairchild semi
fdp8874.pdf

FDP8896
FDP8896

NMay 2008tmMFDP8874N-Channel PowerTrench MOSFET30V, 114A, 5.3mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.3m, VGS = 10V, ID = 40Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.6m, VGS = 4.5V, ID = 40Aeither synchronous or conventional switching PWMcontrollers. It has been optimized

 9.3. Size:323K  fairchild semi
fdp8860.pdf

FDP8896
FDP8896

September 2006FDP8860tmN-Channel PowerTrench MOSFET 30V, 80A, 2.5mFeatures General Description Max rDS(on) = 2.5m at VGS = 10V, ID = 80AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either Max rDS(on) = 2.9m at VGS = 4.5V, ID = 80Asynchronous or conventional switching PWM controllers. It has Lo

 9.4. Size:337K  fairchild semi
fdp8870 f085.pdf

FDP8896
FDP8896

July 2010FDP8870_F085N-Channel PowerTrench MOSFET30V, 156A, 4.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.6m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized fo

 9.5. Size:696K  fairchild semi
fdp8880 fdb8880.pdf

FDP8896
FDP8896

0May 2008tmMFDP8880 / FDB8880N-Channel PowerTrench MOSFET30V, 54A, 11.6mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 14.5m, VGS = 4.5V, ID = 40Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 11.6m, VGS = 10V, ID = 40Acontrollers. It has been op

 9.6. Size:463K  fairchild semi
fdp8870.pdf

FDP8896
FDP8896

eMay 2008FDP8870 tmMN-Channel PowerTrench MOSFET30V, 156A, 4.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.6m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized f

 9.7. Size:250K  fairchild semi
fdp8878.pdf

FDP8896
FDP8896

November 2005FDP8878N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15mGeneral Descriptions Features rDS(ON) = 15m, VGS = 10V, ID = 40AThis N-Channel MOSFET has been designed specifically to rDS(ON) = 19m, VGS = 4.5V, ID = 36Aimprove the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or con

 9.8. Size:519K  onsemi
fdp8874.pdf

FDP8896
FDP8896

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.9. Size:508K  onsemi
fdp8880 fdb8880.pdf

FDP8896
FDP8896

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.10. Size:513K  onsemi
fdp8870.pdf

FDP8896
FDP8896

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.11. Size:283K  inchange semiconductor
fdp8874.pdf

FDP8896
FDP8896

isc N-Channel MOSFET Transistor FDP8874FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 53m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 9.12. Size:284K  inchange semiconductor
fdp8860.pdf

FDP8896
FDP8896

isc N-Channel MOSFET Transistor FDP8860FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 2.5m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 9.13. Size:283K  inchange semiconductor
fdp8880.pdf

FDP8896
FDP8896

isc N-Channel MOSFET Transistor FDP8880FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 116m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 9.14. Size:284K  inchange semiconductor
fdp8870.pdf

FDP8896
FDP8896

isc N-Channel MOSFET Transistor FDP8870FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 41m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Otros transistores... FDP8870F085 , STK900 , FDP8874 , STK801 , FDP8876 , STK600 , FDP8880 , STK400 , 8205A , STK103 , FDP8N50NZ , FDPF10N50FT , FDPF10N50UT , FDPF10N60NZ , STM4472 , FDPF10N60ZUT , STG8209 .

 

 
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