FDP8896 PDF and Equivalents Search

N May 2008 tmM FDP8896 N-Channel PowerTrench MOSFET 30V, 92A, 5.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 7.0m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized f... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

isc N-Channel MOSFET Transistor FDP8896 FEATURES With TO-220 packaging Drain Source Voltage- V 30V DSS Static drain-source on-resistance RDS(on) 59m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

November 2005 FDP8876 N-Channel PowerTrench MOSFET 30V, 71A, 8.5m General Descriptions Features rDS(ON) = 8.5m , VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m , VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventiona... See More ⇒

N May 2008 tmM FDP8874 N-Channel PowerTrench MOSFET 30V, 114A, 5.3m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.3m , VGS = 10V, ID = 40A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.6m , VGS = 4.5V, ID = 40A either synchronous or conventional switching PWM controllers. It has been optimized ... See More ⇒

September 2006 FDP8860 tm N-Channel PowerTrench MOSFET 30V, 80A, 2.5m Features General Description Max rDS(on) = 2.5m at VGS = 10V, ID = 80A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either Max rDS(on) = 2.9m at VGS = 4.5V, ID = 80A synchronous or conventional switching PWM controllers. It has Lo... See More ⇒

July 2010 FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.6m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized fo... See More ⇒

0 May 2008 tmM FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 14.5m , VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 11.6m , VGS = 10V, ID = 40A controllers. It has been op... See More ⇒

e May 2008 FDP8870 tmM N-Channel PowerTrench MOSFET 30V, 156A, 4.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.6m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized f... See More ⇒

November 2005 FDP8878 N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15m General Descriptions Features rDS(ON) = 15m , VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 19m , VGS = 4.5V, ID = 36A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or con... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

isc N-Channel MOSFET Transistor FDP8874 FEATURES With TO-220 packaging Drain Source Voltage- V 30V DSS Static drain-source on-resistance RDS(on) 53m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

isc N-Channel MOSFET Transistor FDP8860 FEATURES With TO-220 packaging Drain Source Voltage- V 30V DSS Static drain-source on-resistance RDS(on) 2.5m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒

isc N-Channel MOSFET Transistor FDP8880 FEATURES With TO-220 packaging Drain Source Voltage- V 30V DSS Static drain-source on-resistance RDS(on) 116m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒

isc N-Channel MOSFET Transistor FDP8870 FEATURES With TO-220 packaging Drain Source Voltage- V 30V DSS Static drain-source on-resistance RDS(on) 41m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒