WMK053N10HGS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMK053N10HGS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 197.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 123 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12.8 nS
Cossⓘ - Capacitancia de salida: 662 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Paquete / Cubierta: TO220
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WMK053N10HGS Datasheet (PDF)
wmk053n10hgs.pdf

WMK053N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK053N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 100V, I = 123A
wmk053nv8hgs.pdf

WMK053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionWMK053NV8HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDFeatures GTO-220 V = 85V, I = 125A DS
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WML05N80M3, W 80M3, WM M3 WMN05N8 MM05N80MWMO0 80M3, WM M3 05N80M3, WMP05N8 MK05N80M 800 Junction ET0V 2.0 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf
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W 0MM, WMOWMK05N70 O05N70MM WMN05N WMM05N70N70MM, W 0MM, WMP05N70MM 700V 1.2 Z otected Power M TV Zener-pro MOSFETDescripptionWMOSTM MM is Wa new generatio super ayons w on junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM MM is ate charge
Otros transistores... WMK030N06LG4 , WMK036N12HGS , WMK037N10HGS , WMK040N08HGS , WMK043N10HGS , WMK043N10LGS , WMK048NV6HG4 , WMK048NV6LG4 , IRFP450 , WMK053NV8HGS , WMK05N70MM , WMO05N70MM , WMN05N70MM , WMM05N70MM , WMP05N70MM , WMK060N08HG2 , WMK060N10LGS .
History: AM7363P | IRFB4610PBF
History: AM7363P | IRFB4610PBF



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