WMK053N10HGS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMK053N10HGS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 197.4 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 123 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 82.5 nC
Tiempo de subida (tr): 12.8 nS
Conductancia de drenaje-sustrato (Cd): 662 pF
Resistencia entre drenaje y fuente RDS(on): 0.0055 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET WMK053N10HGS
WMK053N10HGS Datasheet (PDF)
wmk053n10hgs.pdf
WMK053N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK053N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 100V, I = 123A
wmk053nv8hgs.pdf
WMK053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionWMK053NV8HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDFeatures GTO-220 V = 85V, I = 125A DS
wml05n80m3 wmn05n80m3 wmm05n80m3 wmo05n80m3 wmp05n80m3 wmk05n80m3.pdf
WML05N80M3, W 80M3, WM M3 WMN05N8 MM05N80MWMO0 80M3, WM M3 05N80M3, WMP05N8 MK05N80M 800 Junction ET0V 2.0 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf
wmk05n70mm wmo05n70mm wmn05n70mm wmm05n70mm wmp05n70mm.pdf
W 0MM, WMOWMK05N70 O05N70MM WMN05N WMM05N70N70MM, W 0MM, WMP05N70MM 700V 1.2 Z otected Power M TV Zener-pro MOSFETDescripptionWMOSTM MM is Wa new generatio super ayons w on junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM MM is ate charge
wml05n100c2 wmk05n100c2 wmm05n100c2 wmn05n100c2 wmp05n100c2 wmo05n100c2.pdf
WML05N100C2, WMK05N100C2, WMM C2 M05N100CWMN05N WMP05N100C2, WMO C2 N100C2, W O05N100C 1000V 2.6 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D S D G GG D G and low ga charge performanc WMOS
wml05n105c2 wmk05n105c2 wmm05n105c2 wmn05n105c2 wmp05n105c2 wmo05n105c2.pdf
WML05N105C2, WMK05N105C2, WMM C2 M05N105CWMN05N WMP05N105C2, WMO C2 N105C2, W O05N105C 1050V 2.8 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D S D G GG D G and low ga charge performanc WMOS
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
