WMK053N10HGS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMK053N10HGS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 197.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 123 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 82.5 nC
Rise Time (tr): 12.8 nS
Drain-Source Capacitance (Cd): 662 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm
Package: TO220
WMK053N10HGS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMK053N10HGS Datasheet (PDF)
wmk053n10hgs.pdf
WMK053N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK053N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 100V, I = 123A
wmk053nv8hgs.pdf
WMK053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionWMK053NV8HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDFeatures GTO-220 V = 85V, I = 125A DS
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