WMK060N10LGS Todos los transistores

 

WMK060N10LGS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMK060N10LGS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 162 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 116 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 75 nC
   Tiempo de subida (tr): 13 nS
   Conductancia de drenaje-sustrato (Cd): 645 pF
   Resistencia entre drenaje y fuente RDS(on): 0.006 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET WMK060N10LGS

 

WMK060N10LGS Datasheet (PDF)

 ..1. Size:534K  way-on
wmk060n10lgs.pdf

WMK060N10LGS WMK060N10LGS

WMK060N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK060N10LGS uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =

 7.1. Size:507K  way-on
wmk060n08hg2.pdf

WMK060N10LGS WMK060N10LGS

WMK060N08HG2 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK060N08HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-220 V = 80V, I = 95A

 9.1. Size:673K  way-on
wml06n80m3 wmn06n80m3 wmm06n80m3 wmo06n80m3 wmp06n80m3 wmk06n80m3.pdf

WMK060N10LGS WMK060N10LGS

WML06N80M3, W 80M3, WM M3 WMN06N8 MM06N80MWMO0 80M3, WM M3 06N80M3, WMP06N8 MK06N80M 800 Junction ET0V 1.8 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top

 


WMK060N10LGS
  WMK060N10LGS
  WMK060N10LGS
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
Back to Top