Справочник MOSFET. WMK060N10LGS

 

WMK060N10LGS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMK060N10LGS
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 162 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 116 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 75 nC
   Время нарастания (tr): 13 ns
   Выходная емкость (Cd): 645 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.006 Ohm
   Тип корпуса: TO220

 Аналог (замена) для WMK060N10LGS

 

 

WMK060N10LGS Datasheet (PDF)

 ..1. Size:534K  way-on
wmk060n10lgs.pdf

WMK060N10LGS WMK060N10LGS

WMK060N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK060N10LGS uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =

 7.1. Size:507K  way-on
wmk060n08hg2.pdf

WMK060N10LGS WMK060N10LGS

WMK060N08HG2 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK060N08HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-220 V = 80V, I = 95A

 9.1. Size:673K  way-on
wml06n80m3 wmn06n80m3 wmm06n80m3 wmo06n80m3 wmp06n80m3 wmk06n80m3.pdf

WMK060N10LGS WMK060N10LGS

WML06N80M3, W 80M3, WM M3 WMN06N8 MM06N80MWMO0 80M3, WM M3 06N80M3, WMP06N8 MK06N80M 800 Junction ET0V 1.8 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top