WMK099N10HGS Todos los transistores

 

WMK099N10HGS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMK099N10HGS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 96.1 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 68 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 59 nC
   Tiempo de subida (tr): 28.5 nS
   Conductancia de drenaje-sustrato (Cd): 300 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0099 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET WMK099N10HGS

 

WMK099N10HGS Datasheet (PDF)

 ..1. Size:542K  way-on
wmk099n10hgs.pdf

WMK099N10HGS
WMK099N10HGS

WMK099N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK099N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 68A

 5.1. Size:610K  way-on
wmk099n10lgs.pdf

WMK099N10HGS
WMK099N10HGS

WMK099N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK099N10LGS uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =

 5.2. Size:443K  way-on
wmk099n10lg2.pdf

WMK099N10HGS
WMK099N10HGS

WMK099N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK099N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SFeatures DGTO-220 V = 100V, I = 65

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


WMK099N10HGS
  WMK099N10HGS
  WMK099N10HGS
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
Back to Top