All MOSFET. WMK099N10HGS Datasheet

 

WMK099N10HGS Datasheet and Replacement


   Type Designator: WMK099N10HGS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 68 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 28.5 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm
   Package: TO220
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WMK099N10HGS Datasheet (PDF)

 ..1. Size:542K  way-on
 wmk099n10hgs.pdf pdf_icon

WMK099N10HGS

WMK099N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK099N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 68A

 5.1. Size:610K  way-on
 wmk099n10lgs.pdf pdf_icon

WMK099N10HGS

WMK099N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK099N10LGS uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =

 5.2. Size:443K  way-on
 wmk099n10lg2.pdf pdf_icon

WMK099N10HGS

WMK099N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK099N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SFeatures DGTO-220 V = 100V, I = 65

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History: IRFBA1404 | DH3205A | ZVP3310ASTOB | STP656F | AO6800 | IXFK24N80P | UTM4052L

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