WMK099N10LG2 Todos los transistores

 

WMK099N10LG2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMK099N10LG2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 96 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 65 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 23 nC
   Tiempo de subida (tr): 3.9 nS
   Conductancia de drenaje-sustrato (Cd): 300 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0099 Ohm
   Paquete / Cubierta: TO220

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WMK099N10LG2 Datasheet (PDF)

 ..1. Size:443K  way-on
wmk099n10lg2.pdf

WMK099N10LG2
WMK099N10LG2

WMK099N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK099N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SFeatures DGTO-220 V = 100V, I = 65

 3.1. Size:610K  way-on
wmk099n10lgs.pdf

WMK099N10LG2
WMK099N10LG2

WMK099N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK099N10LGS uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =

 5.1. Size:542K  way-on
wmk099n10hgs.pdf

WMK099N10LG2
WMK099N10LG2

WMK099N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK099N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 68A

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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