WMK25N06TS Todos los transistores

 

WMK25N06TS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMK25N06TS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 41.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15.3 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: TO220

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WMK25N06TS datasheet

 ..1. Size:989K  way-on
 wmk25n06ts.pdf pdf_icon

WMK25N06TS

WMK25N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMK25N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S Features D G TO-220 V = 60V, I = 25A DS D R

 8.1. Size:677K  way-on
 wml25n50c4 wmo25n50c4 wmk25n50c4 wmn25n50c4 wmm25n50c4 wmj25n50c4.pdf pdf_icon

WMK25N06TS

WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50C WMN2 MJ25N50C 25N50C4, WMM25N50C4, WM C4 500V 0.125 S 0 Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM

 8.2. Size:650K  way-on
 wml25n65em wmk25n65em wmn25n65em wmm25n65em wmj25n65em.pdf pdf_icon

WMK25N06TS

WML25N6 MK25N65EM W 65EM, WM WMN25 WMM25N6 MJ25N65EM 5N65EM, W 65EM, WM 650V 0.165 S 0 Super Junction Power MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate charge perf

 8.3. Size:1006K  way-on
 wmk25n10t1.pdf pdf_icon

WMK25N06TS

WMK25N10T1 100V N-Channel Enhancement Mode Power MOSFET Description WMK25N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S Features D G TO-220 V = 100V, I = 25A DS D R

MOSTRAR MÁS

Otros transistores... WMK180N03TS , WMK18N50D1B , WML18N50D1B , WMJ18N50D1B , WMK18P10TS , WMK190N03TS , WMK190N15HG4 , WMK220N20HG3 , K2611 , WMK25N10T1 , WMK28N15T2 , WMK340N20HG2 , WMK4N90D1B , WML4N90D1B , WMM4N90D1B , WMK50N06TS , WMK6N90D1 .

History: WMO90N02T1

 

 

 

 

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