WMK25N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK25N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 60V, I = 25A DS D R

WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50CWMN2 MJ25N50C25N50C4, WMM25N50C4, WM C4 500V 0.125 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM

WML25N6 MK25N65EM W 65EM, WMWMN25 WMM25N6 MJ25N65EM 5N65EM, W 65EM, WM 650V 0.165 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate charge perf

WMK25N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK25N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 100V, I = 25A DS D R

WML25N8 MM25N80M80M3, WM M3 WMN2 80M3, WM M3 25N80M3, WMJ25N8 MK25N80M 800V 0.21 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga charge performanc WMOSTM

WML25N7 MK25N70EM W 70EM, WMWMN25 WMM25N7 MJ25N70EM 5N70EM, W 70EM, WM 700V 0.165 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate charge perf