STM4472 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STM4472
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET STM4472
STM4472 Datasheet (PDF)
stm4472.pdf
GreenProductS TM4472S amHop Microelectronics C orp.Jan.7 ,2008 ver1.0N- Channel nhancement Mode Field Effect ransistorE TF E ATUR E SPR ODUC T S UMMAR YS uper high dense cell design for low R DS (ON).ID R DS (ON) ( m ) MaxVDS SR ugged and reliable.24 @ VG S = 10VS urface Mount Package.40V 7 A30 @ VG S = 4.5VE S D Protected.S O-81ABS OLUTE MAXIMUM R
stm4470a.pdf
STM4470ASamHop Microelectronics Corp.May, 10 2007N-Channel Enhancement Mode Field Effect TransistorF E ATUR E SPRODUCT SUMMARYS uper high dense cell design for low R DS (ON).VDSS ID RDS(ON) ( m ) MaxR ugged and reliable.10.5 @ VGS = 10V40V 10AS urface Mount Package.13.5 @ VGS = 4.5VE S D Protected.SO-81ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise note
stm4470e.pdf
STM4470ESamHop Microelectronics Corp.May. 15 2007 ver1.0N-Channel Enhancement Mode Field Effect TransistorF E ATUR E SPRODUCT SUMMARYS uper high dense cell design for low R DS (ON).VDSS ID RDS(ON) ( m ) MaxR ugged and reliable.12 @ VGS = 10V40V 9.5AS urface Mount Package.15 @ VGS = 4.5VE S D Protected.SO-81ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise
stm4470.pdf
GreenProductSTM4470SamHop Microelectronics Corp.Oct. 16. 2006 Ver1.1N-Channel Enhancement Mode Field Effect TransistorPRODUCT SUMMARY FEATURESdSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) ( m ) MaxRugged and reliable.10 @ VGS = 10V40V 10ASurface Mount Package.13 @ VGS = 4.5VSO-81ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)Para
Otros transistores... FDP8880 , STK400 , FDP8896 , STK103 , FDP8N50NZ , FDPF10N50FT , FDPF10N50UT , FDPF10N60NZ , IRF1405 , FDPF10N60ZUT , STG8209 , FDPF12N50FT , FDPF12N50NZ , FDPF12N50T , FDPF12N50UT , FDPF12N60NZ , STG8205 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918