STM4472 Todos los transistores

 ..1. Size:140K  samhop
 stm4472.pdf

Green Product S TM4472 S amHop Microelectronics C orp. Jan.7 ,2008 ver1.0 N- Channel nhancement Mode Field Effect ransistor E T F E ATUR E S PR ODUC T S UMMAR Y S uper high dense cell design for low R DS (ON). ID R DS (ON) ( m ) Max VDS S R ugged and reliable. 24 @ VG S = 10V S urface Mount Package. 40V 7 A 30 @ VG S = 4.5V E S D Protected. S O-8 1 ABS OLUTE MAXIMUM R

 8.1. Size:117K  samhop
 stm4470a.pdf

STM4470A SamHop Microelectronics Corp. May, 10 2007 N-Channel Enhancement Mode Field Effect Transistor F E ATUR E S PRODUCT SUMMARY S uper high dense cell design for low R DS (ON). VDSS ID RDS(ON) ( m ) Max R ugged and reliable. 10.5 @ VGS = 10V 40V 10A S urface Mount Package. 13.5 @ VGS = 4.5V E S D Protected. SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise note

 8.2. Size:116K  samhop
 stm4470e.pdf

STM4470E SamHop Microelectronics Corp. May. 15 2007 ver1.0 N-Channel Enhancement Mode Field Effect Transistor F E ATUR E S PRODUCT SUMMARY S uper high dense cell design for low R DS (ON). VDSS ID RDS(ON) ( m ) Max R ugged and reliable. 12 @ VGS = 10V 40V 9.5A S urface Mount Package. 15 @ VGS = 4.5V E S D Protected. SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise

 8.3. Size:137K  samhop
 stm4470.pdf

Green Product STM4470 SamHop Microelectronics Corp. Oct. 16. 2006 Ver1.1 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY FEATURES d Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( m ) Max Rugged and reliable. 10 @ VGS = 10V 40V 10A Surface Mount Package. 13 @ VGS = 4.5V SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Para