WMK80N04T1 Todos los transistores

 

WMK80N04T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMK80N04T1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 36 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 192 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO220
 

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WMK80N04T1 Datasheet (PDF)

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 wmk80n04t1.pdf pdf_icon

WMK80N04T1

WMK80N04T1 40V N-Channel Enhancement Mode Power MOSFET DescriptionWMK80NN04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features SDG V = 40V, I = 80A DS DTO-220R

 7.1. Size:614K  way-on
 wmk80n08ts.pdf pdf_icon

WMK80N04T1

WMK80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 80V, I = 80A DS DR

 7.2. Size:623K  way-on
 wmk80n06ts.pdf pdf_icon

WMK80N04T1

WMK80N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK80N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features SDG V = 60V, I = 80A DS D TO-220R

 9.1. Size:927K  way-on
 wml80r160s wmk80r160s wmn80r160s wmm80r160s wmj80r160s.pdf pdf_icon

WMK80N04T1

WML80R160S, WMK80R160S WMN80R160S, WMM80R160S, WMJ80R160S 800V 0.16 Super Junction Power MOSFET DescriptionWMOSTM S is Wayons new generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM S is TO-220F TO-262 TO-220 suitable for applications

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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