WMK80N04T1 Todos los transistores

 

WMK80N04T1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMK80N04T1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 192 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TO220

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WMK80N04T1 datasheet

 ..1. Size:647K  way-on
 wmk80n04t1.pdf pdf_icon

WMK80N04T1

WMK80N04T1 40V N-Channel Enhancement Mode Power MOSFET Description WMK80NN04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features S D G V = 40V, I = 80A DS D TO-220 R

 7.1. Size:614K  way-on
 wmk80n08ts.pdf pdf_icon

WMK80N04T1

WMK80N08TS 80V N-Channel Enhancement Mode Power MOSFET Description WMK80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S Features D G TO-220 V = 80V, I = 80A DS D R

 7.2. Size:623K  way-on
 wmk80n06ts.pdf pdf_icon

WMK80N04T1

WMK80N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMK80N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features S D G V = 60V, I = 80A DS D TO-220 R

 9.1. Size:927K  way-on
 wml80r160s wmk80r160s wmn80r160s wmm80r160s wmj80r160s.pdf pdf_icon

WMK80N04T1

WML80R160S, WMK80R160S WMN80R160S, WMM80R160S, WMJ80R160S 800V 0.16 Super Junction Power MOSFET Description WMOSTM S is Wayon s new generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM S is TO-220F TO-262 TO-220 suitable for applications

MOSTRAR MÁS

Otros transistores... WMK6N90D1 , WML6N90D1 , WMM6N90D1 , WMK75N03T1 , WMK7N65D1B , WMH7N65D1B , WML7N65D1B , WMO7N65D1B , IRF540 , WMK80N06TS , WMK80N08TS , WMK90N08TS , WMK9N50D1B , WML9N50D1B , WMO9N50D1B , WML030N06HG4 , WML03N80M3 .

 

 

 

 

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