All MOSFET. WMK80N04T1 Datasheet

 

WMK80N04T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMK80N04T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 36 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 192 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO220

 WMK80N04T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMK80N04T1 Datasheet (PDF)

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