WMM08N70EM Todos los transistores

 

WMM08N70EM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMM08N70EM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 46 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 24 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.93 Ohm

Encapsulados: TO263

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WMM08N70EM datasheet

 ..1. Size:668K  way-on
 wml08n70em wmk08n70em wmm08n70em wmn08n70em wmp08n70em wmo08n70em.pdf pdf_icon

WMM08N70EM

WML08 WMK08N7 8N70EM, W 70EM, WMM08N70EM WMN08 WMP08N7 8N70EM, W 70EM, WMO08N70EM 700V Power M T V 0.8 Super Junction P MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is at

 6.1. Size:670K  way-on
 wmm08n70c4 wml08n70c4 wmo08n70c4 wmn08n70c4 wmp08n70c4 wmk08n70c4.pdf pdf_icon

WMM08N70EM

WMM0 70C4, MO08N70C 08N70C4, WML08N7 WM C4 WMN0 70C4, MK08N70C 08N70C4, WMP08N7 WM C4 700V 0.65 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WM

 8.1. Size:667K  way-on
 wmm08n60c4 wml08n60c4 wmo08n60c4 wmn08n60c4 wmp08n60c4 wmk08n60c4.pdf pdf_icon

WMM08N70EM

WMM0 60C4, MO08N60C 08N60C4, WML08N6 WM C4 WMN0 60C4, MK08N60C 08N60C4, WMP08N6 WM C4 600V 0.65 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WM

 8.2. Size:668K  way-on
 wml08n65em wmk08n65em wmm08n65em wmn08n65em wmp08n65em wmo08n65em.pdf pdf_icon

WMM08N70EM

WML08 WMK08N6 8N65EM, W 65EM, WMM08N65EM WMN08 WMP08N6 8N65EM, W 65EM, WMO08N65EM 650V 0.8 S unction Power M T V Super Ju MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is a

MOSTRAR MÁS

Otros transistores... WML08N65EM , WMK08N65EM , WMM08N65EM , WMN08N65EM , WMP08N65EM , WMO08N65EM , WML08N70EM , WMK08N70EM , 20N50 , WMN08N70EM , WMP08N70EM , WMO08N70EM , WML08N80M3 , WMN08N80M3 , WMM08N80M3 , WMO08N80M3 , WMP08N80M3 .

History: CS55N25A8R-G | WMO05N80M3 | WML9N90D1B

 

 

 

 

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