Справочник MOSFET. WMM08N70EM

 

WMM08N70EM Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMM08N70EM
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 46 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 24 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.93 Ohm
   Тип корпуса: TO263
     - подбор MOSFET транзистора по параметрам

 

WMM08N70EM Datasheet (PDF)

 ..1. Size:668K  way-on
wml08n70em wmk08n70em wmm08n70em wmn08n70em wmp08n70em wmo08n70em.pdfpdf_icon

WMM08N70EM

WML08 WMK08N78N70EM, W 70EM, WMM08N70EM WMN08 WMP08N78N70EM, W 70EM, WMO08N70EM 700V Power M T V 0.8 Super Junction P MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is at

 6.1. Size:670K  way-on
wmm08n70c4 wml08n70c4 wmo08n70c4 wmn08n70c4 wmp08n70c4 wmk08n70c4.pdfpdf_icon

WMM08N70EM

WMM0 70C4, MO08N70C08N70C4, WML08N7 WM C4 WMN0 70C4, MK08N70C08N70C4, WMP08N7 WM C4 700V 0.65 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM

 8.1. Size:667K  way-on
wmm08n60c4 wml08n60c4 wmo08n60c4 wmn08n60c4 wmp08n60c4 wmk08n60c4.pdfpdf_icon

WMM08N70EM

WMM0 60C4, MO08N60C08N60C4, WML08N6 WM C4 WMN0 60C4, MK08N60C08N60C4, WMP08N6 WM C4 600V 0.65 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM

 8.2. Size:668K  way-on
wml08n65em wmk08n65em wmm08n65em wmn08n65em wmp08n65em wmo08n65em.pdfpdf_icon

WMM08N70EM

WML08 WMK08N68N65EM, W 65EM, WMM08N65EM WMN08 WMP08N68N65EM, W 65EM, WMO08N65EM 650V 0.8 S unction Power M TV Super Ju MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is a

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: NCE65N900 | NTR1P02LT1G | STP5NB40 | SHD224805 | IRL3102SPBF | BUZ64 | 2SK3532

 

 
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