WMN10N100C2 Todos los transistores

 

WMN10N100C2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMN10N100C2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 86 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 18.8 nC
   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 26 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO262
     - Selección de transistores por parámetros

 

WMN10N100C2 Datasheet (PDF)

 ..1. Size:677K  way-on
 wml10n100c2 wmn10n100c2 wmm10n100c2 wmj10n100c2 wmo10n100c2 wmp10n100c2 wmk10n100c2.pdf pdf_icon

WMN10N100C2

WM 2, WMN10N MM10N100CML10N100C2 N100C2, WM C2 WMJ10N100C2, WM C2, WMP10N MK10N100CMO10N100C N100C2, WM C2 1000V 1.1 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low ga

 6.1. Size:678K  way-on
 wml10n105c2 wmn10n105c2 wmm10n105c2 wmj10n105c2 wmo10n105c2 wmp10n105c2 wmk10n105c2.pdf pdf_icon

WMN10N100C2

WM 2, WMN10N MM10N105CML10N105C2 N105C2, WM C2 WMJ10N105C2, WM C2, WMP10N MK10N105CMO10N105C N105C2, WM C2 1050V 1.1 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low ga

 8.1. Size:1319K  samwin
 swf10n65d swmn10n65d swy10n65d swp10n65d swu10n65d swj10n65d.pdf pdf_icon

WMN10N100C2

SW10N65DN-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFETFeaturesTO-262 TO-262NTO-220F TO-220SF TO-220FT TO-220BVDSS : 650V High ruggednessID : 10A Low RDS(ON) (Typ 0.9)@VGS=10V Low Gate Charge (Typ 35nC)RDS(ON) : 0.9 Improved dv/dt Capability 100% Avalanche Tested2 Application: UPS,Inverter, 1 112 2 1 1 1

 8.2. Size:1328K  samwin
 swp10n65k swf10n65k swn10n65k swd10n65k swu10n65k swmn10n65k.pdf pdf_icon

WMN10N100C2

SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220F TO-251N TO-262 TO-220 TO-252 TO-220SF BVDSS : 650V High ruggedness ID : 10A Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) :0.36 Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 1 2 1 2 1 2 1 2 1 2 Applicatio

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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