WMM11N80M3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMM11N80M3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 85 W
Voltaje máximo drenador - fuente |Vds|: 800 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 10.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 18.7 nC
Tiempo de subida (tr): 14 nS
Conductancia de drenaje-sustrato (Cd): 33 pF
Resistencia entre drenaje y fuente RDS(on): 0.8 Ohm
Paquete / Cubierta: TO263
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WMM11N80M3 Datasheet (PDF)
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WML11N80M3, W 80M3, WM M3 WMN11N8 MM11N80MWMO1 80M3, WM M3 11N80M3, WMP11N8 MK11N80M 800V 0.68 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo
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WML11N70SR, W 70SR, WM SR WMK11N7 MM11N70S WMN11N70SR, WMP11N7 MO11N70S70SR, WM SR 700V 0.5 Su nction Puper Jun Power MOSFETDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge performanc W
wml11n65sr wmk11n65sr wmm11n65sr wmn11n65sr wmp11n65sr wmo11n65sr.pdf
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WML11N65SR, W 65SR, WM SR WMK11N6 MM11N65S WMN11N65SR, WMP11N6 MO11N65S65SR, WM SR 650V 0.5 Su nction Puper Jun Power MOSFETDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge performanc W
wmm115n15hg4.pdf
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WMM115N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM115N15HG4 uses Wayon's 4th generation power trench DMOSFET technology that has been especially tailored to minimize the Gon-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. TO-263Features V = 150V, I =
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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