All MOSFET. WMM11N80M3 Datasheet

 

WMM11N80M3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMM11N80M3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 10.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18.7 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO263

 WMM11N80M3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMM11N80M3 Datasheet (PDF)

 ..1. Size:674K  way-on
 wml11n80m3 wmn11n80m3 wmm11n80m3 wmo11n80m3 wmp11n80m3 wmk11n80m3.pdf

WMM11N80M3 WMM11N80M3

WML11N80M3, W 80M3, WM M3 WMN11N8 MM11N80MWMO1 80M3, WM M3 11N80M3, WMP11N8 MK11N80M 800V 0.68 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo

 8.1. Size:664K  way-on
 wml11n70sr wmk11n70sr wmm11n70sr wmn11n70sr wmp11n70sr wmo11n70sr.pdf

WMM11N80M3 WMM11N80M3

WML11N70SR, W 70SR, WM SR WMK11N7 MM11N70S WMN11N70SR, WMP11N7 MO11N70S70SR, WM SR 700V 0.5 Su nction Puper Jun Power MOSFETDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge performanc W

 8.2. Size:665K  way-on
 wml11n65sr wmk11n65sr wmm11n65sr wmn11n65sr wmp11n65sr wmo11n65sr.pdf

WMM11N80M3 WMM11N80M3

WML11N65SR, W 65SR, WM SR WMK11N6 MM11N65S WMN11N65SR, WMP11N6 MO11N65S65SR, WM SR 650V 0.5 Su nction Puper Jun Power MOSFETDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge performanc W

 9.1. Size:709K  way-on
 wmm115n15hg4.pdf

WMM11N80M3 WMM11N80M3

WMM115N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM115N15HG4 uses Wayon's 4th generation power trench DMOSFET technology that has been especially tailored to minimize the Gon-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. TO-263Features V = 150V, I =

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STB50N25M5 | PDNM6UT20V05 | WMM36N60C4 | STW220NF75 | KI138K

 

 
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