WMK12N100C2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMK12N100C2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 32 nS
Cossⓘ - Capacitancia de salida: 49 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Paquete / Cubierta: TO220
- Selección de transistores por parámetros
WMK12N100C2 Datasheet (PDF)
wml12n100c2 wmm12n100c2 wmn12n100c2 wmj12n100c2 wmk12n100c2.pdf

WML12N100C2, WMM C2 W M12N100CWMN12N WMJ12N10 K12N100CN100C2, W 00C2, WMK C2 1000V 0.68 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C
wml12n105c2 wmm12n105c2 wmn12n105c2 wmj12n105c2 wmk12n105c2.pdf

WML12N105C2, WMM12N105C2 WMN12N105C2, WMJ12N105C2, WMK12N105C2 1050V 0.68 Super Junction Power MOSFET DescriptionWMOSTM C2 is Wayons 2nd generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM C2 is TO-220F TO-262 TO-220 suitable for applic
wml12n65d1b wmk12n65d1b.pdf

WML12N65D1B WMK12N65D1B650V 12A 0.58 N-ch Power MOSFETDescriptionTO-220 TO-220FWMOSTM D1 is Wayons 1st generation VDMOSfamily that is dramatic reduction in on-resistanceand ultra-low gate charge for applicationsrequiring high power density and high efficiency.And it is very robust and RoHS compliant.GFeatures DGSDS V =700V@TDS jmax Typ.R =0.58@V =1
wml12n65d1 wmk12n65d1.pdf

WML12N65D1 WMK12N65D1650V 12A 0.58 N-ch Power MOSFETDescriptionTO-220 TO-220FWMOSTM D1 is Wayons 1st generation VDMOSfamily that is dramatic reduction in on-resistanceand ultra-low gate charge for applicationsrequiring high power density and high efficiency.And it is very robust and RoHS compliant.GFeatures DGSDS V =700V@TDS jmax Typ.R =0.58@V =10V
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STF11NM80 | IRFPC42R | SIHF9540S | HITJ0203MP | SPB80N10LG | SPP80P06PH | SPS04N60C3
History: STF11NM80 | IRFPC42R | SIHF9540S | HITJ0203MP | SPB80N10LG | SPP80P06PH | SPS04N60C3



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