WMK12N100C2. Аналоги и основные параметры
Наименование производителя: WMK12N100C2
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1000 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 32 ns
Cossⓘ - Выходная емкость: 49 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
Тип корпуса: TO220
Аналог (замена) для WMK12N100C2
- подборⓘ MOSFET транзистора по параметрам
WMK12N100C2 даташит
wml12n100c2 wmm12n100c2 wmn12n100c2 wmj12n100c2 wmk12n100c2.pdf
WML12N100C2, WMM C2 W M12N100C WMN12N WMJ12N10 K12N100C N100C2, W 00C2, WMK C2 1000V 0.68 S unction Power M T Super Ju MOSFET Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM C
wml12n105c2 wmm12n105c2 wmn12n105c2 wmj12n105c2 wmk12n105c2.pdf
WML12N105C2, WMM12N105C2 WMN12N105C2, WMJ12N105C2, WMK12N105C2 1050V 0.68 Super Junction Power MOSFET Description WMOSTM C2 is Wayon s 2nd generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM C2 is TO-220F TO-262 TO-220 suitable for applic
wml12n65d1b wmk12n65d1b.pdf
WML12N65D1B WMK12N65D1B 650V 12A 0.58 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G Features D G S D S V =700V@T DS jmax Typ.R =0.58 @V =1
wml12n65d1 wmk12n65d1.pdf
WML12N65D1 WMK12N65D1 650V 12A 0.58 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G Features D G S D S V =700V@T DS jmax Typ.R =0.58 @V =10V
Другие MOSFET... WMO11N80M3 , WMP11N80M3 , WMK11N80M3 , WML125N12LG2 , WML12N100C2 , WMM12N100C2 , WMN12N100C2 , WMJ12N100C2 , 13N50 , WML12N105C2 , WMM12N105C2 , WMN12N105C2 , WMJ12N105C2 , WMK12N105C2 , WML12N65D1 , WMK12N65D1 , WML12N65D1B .
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