WMN12N80M3 Todos los transistores

 

WMN12N80M3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMN12N80M3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 86 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 41 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.62 Ohm

Encapsulados: TO262

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WMN12N80M3 datasheet

 ..1. Size:674K  way-on
wml12n80m3 wmn12n80m3 wmm12n80m3 wmo12n80m3 wmp12n80m3 wmk12n80m3.pdf pdf_icon

WMN12N80M3

WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80M WMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S T V Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perfo

 8.1. Size:685K  samwin
swmn12n65da.pdf pdf_icon

WMN12N80M3

SW12N65DA N-channel Enhanced mode TO-220SF MOSFET TO-220SF Features BVDSS 650V ID 12A High ruggedness Low RDS(ON) (Typ 0.75 )@VGS=10V RDS(ON) 0.75 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application LED, Charger, PC Power 1 1. Gate 2. Drain 3. Source 3 General Description Th

 8.2. Size:673K  samwin
swmn12n65d swy12n65d.pdf pdf_icon

WMN12N80M3

SW12N65D N-channel Enhanced mode TO-220SF/TO-220FT MOSFET TO-220SF TO-220FT BVDSS 650V Features ID 12A High ruggedness RDS(ON) 0.66 Low RDS(ON) (Typ 0.66 )@VGS=10V Low Gate Charge (Typ 41nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 1 2 3 3 Application LED , Charger, PC Power 1. Gate 2. Drain 3. Source

 8.3. Size:842K  samwin
sw12n70d swf12n70d swu12n70d swmn12n70d swy12n70d.pdf pdf_icon

WMN12N80M3

SW12N70D N-channel Enhanced mode TO-220F/TO-262/TO-220SF/TO-220FT MOSFET TO-220FT TO-220SF Features TO-220F TO-262 BVDSS 700V ID 12A High ruggedness Low RDS(ON) (Typ 0.75 )@VGS=10V RDS(ON) 0.75 Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 1 2 2 2 2 3 3 3 Application LED, PC Power, Char

Otros transistores... WMN12N105C2 , WMJ12N105C2 , WMK12N105C2 , WML12N65D1 , WMK12N65D1 , WML12N65D1B , WMK12N65D1B , WML12N80M3 , STP80NF70 , WMM12N80M3 , WMO12N80M3 , WMP12N80M3 , WMK12N80M3 , WML13N65EM , WMK13N65EM , WMM13N65EM , WMN13N65EM .

 

 

 

 

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