All MOSFET. WMN12N80M3 Datasheet

 

WMN12N80M3 Datasheet and Replacement


   Type Designator: WMN12N80M3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 86 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: TO262
 

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WMN12N80M3 Datasheet (PDF)

 ..1. Size:674K  way-on
wml12n80m3 wmn12n80m3 wmm12n80m3 wmo12n80m3 wmp12n80m3 wmk12n80m3.pdf pdf_icon

WMN12N80M3

WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80MWMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo

 8.1. Size:685K  samwin
swmn12n65da.pdf pdf_icon

WMN12N80M3

SW12N65DA N-channel Enhanced mode TO-220SF MOSFET TO-220SF Features BVDSS : 650V ID : 12A High ruggedness Low RDS(ON) (Typ 0.75)@VGS=10V RDS(ON) :0.75 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:LED, Charger, PC Power 1 1. Gate 2. Drain 3. Source 3 General Description Th

 8.2. Size:673K  samwin
swmn12n65d swy12n65d.pdf pdf_icon

WMN12N80M3

SW12N65D N-channel Enhanced mode TO-220SF/TO-220FT MOSFET TO-220SF TO-220FT BVDSS : 650V Features ID : 12A High ruggedness RDS(ON) : 0.66 Low RDS(ON) (Typ 0.66)@VGS=10V Low Gate Charge (Typ 41nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 1 2 3 3 Application: LED , Charger, PC Power 1. Gate 2. Drain 3. Source

 8.3. Size:842K  samwin
sw12n70d swf12n70d swu12n70d swmn12n70d swy12n70d.pdf pdf_icon

WMN12N80M3

SW12N70D N-channel Enhanced mode TO-220F/TO-262/TO-220SF/TO-220FT MOSFET TO-220FT TO-220SF Features TO-220F TO-262 BVDSS : 700V ID : 12A High ruggedness Low RDS(ON) (Typ 0.75)@VGS=10V RDS(ON) : 0.75 Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 1 2 2 2 2 3 3 3 Application:LED, PC Power, Char

Datasheet: WMN12N105C2 , WMJ12N105C2 , WMK12N105C2 , WML12N65D1 , WMK12N65D1 , WML12N65D1B , WMK12N65D1B , WML12N80M3 , 20N50 , WMM12N80M3 , WMO12N80M3 , WMP12N80M3 , WMK12N80M3 , WML13N65EM , WMK13N65EM , WMM13N65EM , WMN13N65EM .

History: IRFP3207Z | STK830P | NP75N04YUK | IPI04N03LA | MTE05N10FP | WML12N100C2 | STD12N60DM2AG

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