WMO14N60C4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO14N60C4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 85 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 21.5 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Encapsulados: TO252
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WMO14N60C4 datasheet
wml14n60c4 wmk14n60c4 wmm14n60c4 wmn14n60c4 wmp14n60c4 wmo14n60c4.pdf
WML1 MM14N60C 14N60C4, WMK14N60C4, WM C4 WMN14N60C4, WMP14N60C4, WM C4 MO14N60C 600V n Power MOSFET V 0.33 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C4
wml14n65c4 wmk14n65c4 wmm14n65c4 wmn14n65c4 wmp14n65c4 wmo14n65c4.pdf
WML1 MM14N65C 14N65C4, WMK14N65C4, WM C4 WMN14N65C4, WMP14N65C4, WM C4 MO14N65C 650V n Power MOSFET V 0.33 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C4
wml14n70c4 wmk14n70c4 wmm14n70c4 wmn14n70c4 wmp14n70c4 wmo14n70c4.pdf
WML1 MM14N70C 14N70C4, WMK14N70C4, WM C4 WMN14N70C4, WMP14N70C4, WM C4 MO14N70C 700V n Power MOSFET V 0.33 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C4
wmo140nv6lg4.pdf
WMO140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description WMO140NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This D S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 65V, I = 50
Otros transistores... WMO13N80M3 , WMP13N80M3 , WMK13N80M3 , WML14N60C4 , WMK14N60C4 , WMM14N60C4 , WMN14N60C4 , WMP14N60C4 , 7N60 , WML14N65C4 , WMK14N65C4 , WMM14N65C4 , WMN14N65C4 , WMP14N65C4 , WMO14N65C4 , WML14N70C4 , WMK14N70C4 .
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