WMO14N60C4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WMO14N60C4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 21.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO252

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WMO14N60C4 Datasheet (PDF)

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wml14n60c4 wmk14n60c4 wmm14n60c4 wmn14n60c4 wmp14n60c4 wmo14n60c4.pdf

WML1 MM14N60C14N60C4, WMK14N60C4, WM C4 WMN14N60C4, WMP14N60C4, WM C4 MO14N60C 600V n Power MOSFETV 0.33 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

7.1. Size:672K way-on
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WML1 MM14N65C14N65C4, WMK14N65C4, WM C4 WMN14N65C4, WMP14N65C4, WM C4 MO14N65C 650V n Power MOSFETV 0.33 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

8.1. Size:672K way-on
wml14n70c4 wmk14n70c4 wmm14n70c4 wmn14n70c4 wmp14n70c4 wmo14n70c4.pdf

WML1 MM14N70C14N70C4, WMK14N70C4, WM C4 WMN14N70C4, WMP14N70C4, WM C4 MO14N70C 700V n Power MOSFETV 0.33 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

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wmo140nv6lg4.pdf

WMO140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO140NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This DSdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 65V, I = 50

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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