WMM18N65EM Todos los transistores

 

WMM18N65EM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMM18N65EM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm

Encapsulados: TO263

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WMM18N65EM datasheet

 ..1. Size:708K  way-on
 wml18n65em wmk18n65em wmm18n65em wmn18n65em wmp18n65em wmo18n65em.pdf pdf_icon

WMM18N65EM

WML18 WMK18N6 8N65EM, W 65EM, WMM18N65EM WMN18 WMP18N6 8N65EM, W 65EM, WMO18N65EM 650V Super Ju MOSFET V 0.24 S unction Power M T Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is

 8.1. Size:708K  way-on
 wml18n70em wmk18n70em wmm18n70em wmn18n70em wmp18n70em wmo18n70em.pdf pdf_icon

WMM18N65EM

WML18 WMK18N7 8N70EM, W 70EM, WMM18N70EM WMN18 WMP18N7 8N70EM, W 70EM, WMO18N70EM 700V Super Ju MOSFET V 0.24 S unction Power M T Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is

 8.2. Size:683K  way-on
 wml18n50c4 wmo18n50c4 wmk18n50c4 wmn18n50c4 wmm18n50c4 wmj18n50c4.pdf pdf_icon

WMM18N65EM

WML18N50C4, WMO18N5 WM C4 W 50C4, MK18N50C WMN18N50C4, WMM18N50C4, WM C4 MJ18N50C 500V 0.25 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM C

 9.1. Size:681K  way-on
 wmm180n03ts.pdf pdf_icon

WMM18N65EM

WMM180N03TS 30V N-Channel Enhancement Mode Power MOSFET Description WMM180N03TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet G maintain superior switching performance. S TO-263 Features V = 30V, I = 180A DS D R

MOSTRAR MÁS

Otros transistores... WML18N50C4 , WMO18N50C4 , WMK18N50C4 , WMN18N50C4 , WMM18N50C4 , WMJ18N50C4 , WML18N65EM , WMK18N65EM , AON7506 , WMN18N65EM , WMP18N65EM , WMO18N65EM , WML18N70EM , WMK18N70EM , WMM18N70EM , WMN18N70EM , WMP18N70EM .

History: SSI4N60A | 2N5653 | WMO18N50C4 | WMO16N70SR | IRLZ24 | IXFB132N50P3 | WML26N65SR

 

 

 

 

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