All MOSFET. WMM18N65EM Datasheet

 

WMM18N65EM Datasheet and Replacement


   Type Designator: WMM18N65EM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO263
 

 WMM18N65EM substitution

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WMM18N65EM Datasheet (PDF)

 ..1. Size:708K  way-on
wml18n65em wmk18n65em wmm18n65em wmn18n65em wmp18n65em wmo18n65em.pdf pdf_icon

WMM18N65EM

WML18 WMK18N68N65EM, W 65EM, WMM18N65EM WMN18 WMP18N68N65EM, W 65EM, WMO18N65EM 650V Super Ju MOSFETV 0.24 S unction Power M TDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is

 8.1. Size:708K  way-on
wml18n70em wmk18n70em wmm18n70em wmn18n70em wmp18n70em wmo18n70em.pdf pdf_icon

WMM18N65EM

WML18 WMK18N78N70EM, W 70EM, WMM18N70EM WMN18 WMP18N78N70EM, W 70EM, WMO18N70EM 700V Super Ju MOSFETV 0.24 S unction Power M TDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is

 8.2. Size:683K  way-on
wml18n50c4 wmo18n50c4 wmk18n50c4 wmn18n50c4 wmm18n50c4 wmj18n50c4.pdf pdf_icon

WMM18N65EM

WML18N50C4, WMO18N5 WM C4 W 50C4, MK18N50CWMN18N50C4, WMM18N50C4, WM C4 MJ18N50C 500V 0.25 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C

 9.1. Size:681K  way-on
wmm180n03ts.pdf pdf_icon

WMM18N65EM

WMM180N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMM180N03TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. STO-263Features V = 30V, I = 180A DS DR

Datasheet: WML18N50C4 , WMO18N50C4 , WMK18N50C4 , WMN18N50C4 , WMM18N50C4 , WMJ18N50C4 , WML18N65EM , WMK18N65EM , IRFP250 , WMN18N65EM , WMP18N65EM , WMO18N65EM , WML18N70EM , WMK18N70EM , WMM18N70EM , WMN18N70EM , WMP18N70EM .

History: JBE084M | WMO13N50C4

Keywords - WMM18N65EM MOSFET datasheet

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