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WMK25N65EM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMK25N65EM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 147 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 41 nS
   Cossⓘ - Capacitancia de salida: 59 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO220
 

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WMK25N65EM Datasheet (PDF)

 ..1. Size:650K  way-on
wml25n65em wmk25n65em wmn25n65em wmm25n65em wmj25n65em.pdf pdf_icon

WMK25N65EM

WML25N6 MK25N65EM W 65EM, WMWMN25 WMM25N6 MJ25N65EM 5N65EM, W 65EM, WM 650V 0.165 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate charge perf

 8.1. Size:677K  way-on
wml25n50c4 wmo25n50c4 wmk25n50c4 wmn25n50c4 wmm25n50c4 wmj25n50c4.pdf pdf_icon

WMK25N65EM

WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50CWMN2 MJ25N50C25N50C4, WMM25N50C4, WM C4 500V 0.125 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM

 8.2. Size:1006K  way-on
wmk25n10t1.pdf pdf_icon

WMK25N65EM

WMK25N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK25N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 100V, I = 25A DS D R

 8.3. Size:989K  way-on
wmk25n06ts.pdf pdf_icon

WMK25N65EM

WMK25N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK25N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 60V, I = 25A DS D R

Otros transistores... WMK20N70D1 , WML25N50C4 , WMO25N50C4 , WMK25N50C4 , WMN25N50C4 , WMM25N50C4 , WMJ25N50C4 , WML25N65EM , IRF2807 , WMN25N65EM , WMM25N65EM , WMJ25N65EM , WML25N70EM , WMK25N70EM , WMN25N70EM , WMM25N70EM , WMJ25N70EM .

History: STD10LN80K5 | NP45N06PUK

 

 
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