Справочник MOSFET. WMK25N65EM

 

WMK25N65EM Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMK25N65EM
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 147 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 41 ns
   Cossⓘ - Выходная емкость: 59 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

WMK25N65EM Datasheet (PDF)

 ..1. Size:650K  way-on
wml25n65em wmk25n65em wmn25n65em wmm25n65em wmj25n65em.pdfpdf_icon

WMK25N65EM

WML25N6 MK25N65EM W 65EM, WMWMN25 WMM25N6 MJ25N65EM 5N65EM, W 65EM, WM 650V 0.165 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate charge perf

 8.1. Size:677K  way-on
wml25n50c4 wmo25n50c4 wmk25n50c4 wmn25n50c4 wmm25n50c4 wmj25n50c4.pdfpdf_icon

WMK25N65EM

WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50CWMN2 MJ25N50C25N50C4, WMM25N50C4, WM C4 500V 0.125 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM

 8.2. Size:1006K  way-on
wmk25n10t1.pdfpdf_icon

WMK25N65EM

WMK25N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK25N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 100V, I = 25A DS D R

 8.3. Size:989K  way-on
wmk25n06ts.pdfpdf_icon

WMK25N65EM

WMK25N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK25N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 60V, I = 25A DS D R

Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: SI9945BDY | NVTFS002N04C

 

 
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