WMN25N80M3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMN25N80M3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 62 nS
Cossⓘ - Capacitancia de salida: 90 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
Paquete / Cubierta: TO262
- Selección de transistores por parámetros
WMN25N80M3 Datasheet (PDF)
wml25n80m3 wmm25n80m3 wmn25n80m3 wmj25n80m3 wmk25n80m3.pdf

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Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: TK17J65U | PMPB12UNEA | AFP4925S | AP2301N-HF | AP4511GH | 2N6904 | IXTQ130N20T
History: TK17J65U | PMPB12UNEA | AFP4925S | AP2301N-HF | AP4511GH | 2N6904 | IXTQ130N20T



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