WMN25N80M3 Todos los transistores

 

WMN25N80M3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMN25N80M3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 21 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 62 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm

Encapsulados: TO262

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WMN25N80M3 datasheet

 ..1. Size:668K  way-on
 wml25n80m3 wmm25n80m3 wmn25n80m3 wmj25n80m3 wmk25n80m3.pdf pdf_icon

WMN25N80M3

WML25N8 MM25N80M 80M3, WM M3 WMN2 80M3, WM M3 25N80M3, WMJ25N8 MK25N80M 800V 0.21 S T V Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga charge performanc WMOSTM

 8.1. Size:677K  way-on
 wml25n50c4 wmo25n50c4 wmk25n50c4 wmn25n50c4 wmm25n50c4 wmj25n50c4.pdf pdf_icon

WMN25N80M3

WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50C WMN2 MJ25N50C 25N50C4, WMM25N50C4, WM C4 500V 0.125 S 0 Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM

 8.2. Size:650K  way-on
 wml25n65em wmk25n65em wmn25n65em wmm25n65em wmj25n65em.pdf pdf_icon

WMN25N80M3

WML25N6 MK25N65EM W 65EM, WM WMN25 WMM25N6 MJ25N65EM 5N65EM, W 65EM, WM 650V 0.165 S 0 Super Junction Power MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate charge perf

 8.3. Size:655K  way-on
 wml25n70em wmk25n70em wmn25n70em wmm25n70em wmj25n70em.pdf pdf_icon

WMN25N80M3

WML25N7 MK25N70EM W 70EM, WM WMN25 WMM25N7 MJ25N70EM 5N70EM, W 70EM, WM 700V 0.165 S 0 Super Junction Power MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate charge perf

MOSTRAR MÁS

Otros transistores... WMJ25N65EM , WML25N70EM , WMK25N70EM , WMN25N70EM , WMM25N70EM , WMJ25N70EM , WML25N80M3 , WMM25N80M3 , IRFZ48N , WMJ25N80M3 , WMK25N80M3 , WML26N60F2 , WMO26N60F2 , WMK26N60F2 , WMN26N60F2 , WMM26N60F2 , WMJ26N60F2 .

History: WMN25N65EM | 2SK4068-01 | DMN1002UCA6 | AOD4104 | 2SK1215F | 2SK3642-ZK

 

 

 

 

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