WMN25N80M3 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMN25N80M3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 21 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO262
WMN25N80M3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMN25N80M3 Datasheet (PDF)
wml25n80m3 wmm25n80m3 wmn25n80m3 wmj25n80m3 wmk25n80m3.pdf
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WML25N7 MK25N70EM W 70EM, WMWMN25 WMM25N7 MJ25N70EM 5N70EM, W 70EM, WM 700V 0.165 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate charge perf
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IRLW540A
History: IRLW540A
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