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WMO26N60F2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMO26N60F2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 135 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 22.1 nC
   trⓘ - Tiempo de subida: 37 nS
   Cossⓘ - Capacitancia de salida: 48 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm
   Paquete / Cubierta: TO252
 

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WMO26N60F2 Datasheet (PDF)

 ..1. Size:679K  way-on
 wml26n60f2 wmo26n60f2 wmk26n60f2 wmn26n60f2 wmm26n60f2 wmj26n60f2.pdf pdf_icon

WMO26N60F2

WML2 N60F2, WM F2 26N60F2, WMO26N MK26N60FWMN2 N60F2, WM F2 26N60F2, WMM26N MJ26N60F 600V 0.17 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa

 6.1. Size:681K  way-on
 wml26n60c4 wmk26n60c4 wmn26n60c4 wmm26n60c4 wmo26n60c4 wmj26n60c4.pdf pdf_icon

WMO26N60F2

WML26N60C4, WMO26N6 WM C4 W 60C4, MK26N60CWMN2 MJ26N60C26N60C4, WMM26N60C4, WM C4 600V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM

 6.2. Size:681K  way-on
 wml26n60c4 wmo26n60c4 wmk26n60c4 wmn26n60c4 wmm26n60c4 wmj26n60c4.pdf pdf_icon

WMO26N60F2

WML26N60C4, WMO26N6 WM C4 W 60C4, MK26N60CWMN2 MJ26N60C26N60C4, WMM26N60C4, WM C4 600V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM

 7.1. Size:685K  way-on
 wml26n65c4 wmo26n65c4 wmk26n65c4 wmn26n65c4 wmm26n65c4 wmj26n65c4.pdf pdf_icon

WMO26N60F2

WML26N65C4, WMO26N6 WM C4 W 65C4, MK26N65CWMN2 MJ26N65C26N65C4, WMM26N65C4, WM C4 650V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM

MOSTRAR MÁS

Otros transistores... WMM25N70EM , WMJ25N70EM , WML25N80M3 , WMM25N80M3 , WMN25N80M3 , WMJ25N80M3 , WMK25N80M3 , WML26N60F2 , AON7403 , WMK26N60F2 , WMN26N60F2 , WMM26N60F2 , WMJ26N60F2 , WML26N65F2 , WMO26N65F2 , WMK26N65F2 , WMN26N65F2 .

History: IRLU7821PBF | KIA3510A-252 | RU3080L | STI150N10F7 | IRFB3006G | IRFR4510PBF

 

 
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