Справочник MOSFET. WMO26N60F2

 

WMO26N60F2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMO26N60F2
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 135 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 22.1 nC
   trⓘ - Время нарастания: 37 ns
   Cossⓘ - Выходная емкость: 48 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.21 Ohm
   Тип корпуса: TO252

 Аналог (замена) для WMO26N60F2

 

 

WMO26N60F2 Datasheet (PDF)

 ..1. Size:679K  way-on
wml26n60f2 wmo26n60f2 wmk26n60f2 wmn26n60f2 wmm26n60f2 wmj26n60f2.pdf

WMO26N60F2
WMO26N60F2

WML2 N60F2, WM F2 26N60F2, WMO26N MK26N60FWMN2 N60F2, WM F2 26N60F2, WMM26N MJ26N60F 600V 0.17 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa

 6.1. Size:681K  way-on
wml26n60c4 wmk26n60c4 wmn26n60c4 wmm26n60c4 wmo26n60c4 wmj26n60c4.pdf

WMO26N60F2
WMO26N60F2

WML26N60C4, WMO26N6 WM C4 W 60C4, MK26N60CWMN2 MJ26N60C26N60C4, WMM26N60C4, WM C4 600V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM

 6.2. Size:681K  way-on
wml26n60c4 wmo26n60c4 wmk26n60c4 wmn26n60c4 wmm26n60c4 wmj26n60c4.pdf

WMO26N60F2
WMO26N60F2

WML26N60C4, WMO26N6 WM C4 W 60C4, MK26N60CWMN2 MJ26N60C26N60C4, WMM26N60C4, WM C4 600V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM

 7.1. Size:685K  way-on
wml26n65c4 wmo26n65c4 wmk26n65c4 wmn26n65c4 wmm26n65c4 wmj26n65c4.pdf

WMO26N60F2
WMO26N60F2

WML26N65C4, WMO26N6 WM C4 W 65C4, MK26N65CWMN2 MJ26N65C26N65C4, WMM26N65C4, WM C4 650V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM

 7.2. Size:682K  way-on
wml26n65f2 wmo26n65f2 wmk26n65f2 wmn26n65f2 wmm26n65f2 wmj26n65f2.pdf

WMO26N60F2
WMO26N60F2

WML2 N65F2, WM F2 26N65F2, WMO26N MK26N65FWMN2 N65F2, WM F2 26N65F2, WMM26N MJ26N65F 650V 0.17 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa

 7.3. Size:685K  way-on
wml26n65c4 wmk26n65c4 wmn26n65c4 wmm26n65c4 wmo26n65c4 wmj26n65c4.pdf

WMO26N60F2
WMO26N60F2

WML26N65C4, WMO26N6 WM C4 W 65C4, MK26N65CWMN2 MJ26N65C26N65C4, WMM26N65C4, WM C4 650V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top