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FDPF390N15A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDPF390N15A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 22 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO220F

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FDPF390N15A datasheet

 ..1. Size:623K  fairchild semi
fdpf390n15a.pdf pdf_icon

FDPF390N15A

July 2011 FDPF390N15A N-Channel PowerTrench MOSFET 150V, 15A, 40m Features Description RDS(on) = 31m ( Typ.)@ VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

 ..2. Size:997K  onsemi
fdpf390n15a.pdf pdf_icon

FDPF390N15A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:274K  inchange semiconductor
fdpf390n15a.pdf pdf_icon

FDPF390N15A

isc N-Channel MOSFET Transistor FDPF390N15A FEATURES With TO-220F packaging Drain Source Voltage- V 150V DSS Static drain-source on-resistance RDS(on) 40m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =2

 8.1. Size:485K  fairchild semi
fdp39n20 fdpf39n20.pdf pdf_icon

FDPF390N15A

April 2007 TM UniFET FDP39N20 / FDPF39N20 200V N-Channel MOSFET Features Description 39A, 200V, RDS(on) = 0.066 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 38 nC) stripe, DMOS technology. Low Crss ( typical 57 pF) This advanced technology has been especially

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History: SI1405BDH | FDPF44N25T

 

 

 

 

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