Справочник MOSFET. FDPF390N15A

 

FDPF390N15A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDPF390N15A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 22 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: TO220F
     - подбор MOSFET транзистора по параметрам

 

FDPF390N15A Datasheet (PDF)

 ..1. Size:623K  fairchild semi
fdpf390n15a.pdfpdf_icon

FDPF390N15A

July 2011FDPF390N15A N-Channel PowerTrench MOSFET 150V, 15A, 40mFeatures Description RDS(on) = 31m ( Typ.)@ VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performance.

 ..2. Size:997K  onsemi
fdpf390n15a.pdfpdf_icon

FDPF390N15A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:274K  inchange semiconductor
fdpf390n15a.pdfpdf_icon

FDPF390N15A

isc N-Channel MOSFET Transistor FDPF390N15AFEATURESWith TO-220F packagingDrain Source Voltage-: V 150VDSSStatic drain-source on-resistance:RDS(on) 40m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

 8.1. Size:485K  fairchild semi
fdp39n20 fdpf39n20.pdfpdf_icon

FDPF390N15A

April 2007TMUniFETFDP39N20 / FDPF39N20200V N-Channel MOSFETFeatures Description 39A, 200V, RDS(on) = 0.066 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 38 nC)stripe, DMOS technology. Low Crss ( typical 57 pF)This advanced technology has been especially

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History: TK12Q60W | TK30A06N1 | JFQM3N120E | TMP12N60A | AFP2301AS | IRLU3410PBF | TMB140N10A

 

 
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