CS55N25AKR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CS55N25AKR Datasheet (PDF)

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Silicon N-Channel Power MOSFET R CS55N25 AKR General Description VDSS 250 V CS55N25 AKR the silicon N-channel Enhanced ID 55 A PD (TC=25) 300 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 69 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

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Silicon N-Channel Power MOSFET R CS55N25 A8R-G General Description VDSS 250 V CS55N25 A8R-G the silicon N-channel Enhanced ID 55 A PD (TC=25) 300 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 69 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

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CS55N10 N PD TC=25 250 W 2 W/ ID VGS=10V,TC=25 55 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.5 /W BVDSS VGS=0V,ID=5mA 100 V RDS on VGS=10V,ID=27.5A 0.04 VGS th VDS=VGS,ID=1mA 2.0 4.5 V

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Silicon N-Channel Power Trench MOSFET R CS55N06 A4 General Description VDSS 60 V CS55N06 A4, the silicon N-channel Enhanced ID 55 A RDS(ON)Typ 10 m VDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circ

Otros transistores... WMM26N65SR , WMJ26N65SR , WML28N50C4 , WMK28N50C4 , WMN28N50C4 , B20N15D , DG4N60 , CS55N25A8R-G , IRFZ44 , WMM28N50C4 , WMJ28N50C4 , WML28N60F2 , WMK28N60F2 , WMN28N60F2 , WMM28N60F2 , WMJ28N60F2 , WML28N65C4 .