CS55N25AKR MOSFET Datasheet: N-Ch, 250V, 55A. Full specification with pinout and replacement list

CS55N25AKR Specs and Replacement

Type Designator: CS55N25AKR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 179 nS

Cossⓘ - Output Capacitance: 463 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm

Package: TO247

CS55N25AKR substitution

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CS55N25AKR datasheet

..1. Size:1086K wuxi china
cs55n25akr.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS55N25 AKR General Description VDSS 250 V CS55N25 AKR the silicon N-channel Enhanced ID 55 A PD (TC=25 ) 300 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 69 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe... See More ⇒

6.1. Size:470K wuxi china
cs55n25a8r-g.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS55N25 A8R-G General Description VDSS 250 V CS55N25 A8R-G the silicon N-channel Enhanced ID 55 A PD (TC=25 ) 300 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 69 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒

9.1. Size:104K china
cs55n10.pdf pdf_icon

CS55N10 N PD TC=25 250 W 2 W/ ID VGS=10V,TC=25 55 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.5 /W BVDSS VGS=0V,ID=5mA 100 V RDS on VGS=10V,ID=27.5A 0.04 VGS th VDS=VGS,ID=1mA 2.0 4.5 V ... See More ⇒

9.2. Size:2056K wuxi china
cs55n06a4.pdf pdf_icon

Silicon N-Channel Power Trench MOSFET R CS55N06 A4 General Description VDSS 60 V CS55N06 A4, the silicon N-channel Enhanced ID 55 A RDS(ON)Typ 10 m VDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circ... See More ⇒

Detailed specifications: WMM26N65SR, WMJ26N65SR, WML28N50C4, WMK28N50C4, WMN28N50C4, B20N15D, DG4N60, CS55N25A8R-G, IRFZ44, WMM28N50C4, WMJ28N50C4, WML28N60F2, WMK28N60F2, WMN28N60F2, WMM28N60F2, WMJ28N60F2, WML28N65C4