CS55N25AKR MOSFET: N-Ch, 250V, 55A. Full datasheet with pinout, specifications and replacement transistor list

CS55N25AKR Datasheet (PDF)

..1. Size:1086K wuxi china
cs55n25akr.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS55N25 AKR General Description VDSS 250 V CS55N25 AKR the silicon N-channel Enhanced ID 55 A PD (TC=25) 300 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 69 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

6.1. Size:470K wuxi china
cs55n25a8r-g.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS55N25 A8R-G General Description VDSS 250 V CS55N25 A8R-G the silicon N-channel Enhanced ID 55 A PD (TC=25) 300 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 69 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

9.1. Size:104K china
cs55n10.pdf pdf_icon

CS55N10 N PD TC=25 250 W 2 W/ ID VGS=10V,TC=25 55 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.5 /W BVDSS VGS=0V,ID=5mA 100 V RDS on VGS=10V,ID=27.5A 0.04 VGS th VDS=VGS,ID=1mA 2.0 4.5 V

9.2. Size:2056K wuxi china
cs55n06a4.pdf pdf_icon

Silicon N-Channel Power Trench MOSFET R CS55N06 A4 General Description VDSS 60 V CS55N06 A4, the silicon N-channel Enhanced ID 55 A RDS(ON)Typ 10 m VDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circ

Datasheet: WMM26N65SR , WMJ26N65SR , WML28N50C4 , WMK28N50C4 , WMN28N50C4 , B20N15D , DG4N60 , CS55N25A8R-G , IRFZ44 , WMM28N50C4 , WMJ28N50C4 , WML28N60F2 , WMK28N60F2 , WMN28N60F2 , WMM28N60F2 , WMJ28N60F2 , WML28N65C4 .