WMJ28N50C4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WMJ28N50C4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 160 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 27.3 nC
   trⓘ - Tiempo de subida: 48 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: TO247

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WMJ28N50C4 Datasheet (PDF)

..1. Size:669K way-on
wml28n50c4 wmk28n50c4 wmn28n50c4 wmm28n50c4 wmj28n50c4.pdf

WML28N5 WM C4 50C4, MK28N50CWMN2 MJ28N50C28N50C4, WMM28N50C4, WM C4 500V 0.1 S TSuper Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate ce.

8.1. Size:673K way-on
wml28n65f2 wmk28n65f2 wmn28n65f2 wmm28n65f2 wmj28n65f2.pdf

WML28N65F2, WM F2 MK28N65FWMN2 N65F2, WM F2 28N65F2, WMM28N MJ28N65F 650V 0.15 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET fferin

8.2. Size:673K way-on
wml28n60c4 wmk28n60c4 wmn28n60c4 wmm28n60c4 wmj28n60c4.pdf

WML28N6 WM C4 60C4, MK28N60CWMN2 MJ28N60C28N60C4, WMM28N60C4, WM C4 600V 0.13 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate c

8.3. Size:673K way-on
wml28n65c4 wmk28n65c4 wmn28n65c4 wmm28n65c4 wmj28n65c4.pdf

WML28N6 WM C4 65C4, MK28N65CWMN2 MJ28N65C28N65C4, WMM28N65C4, WM C4 650V 0.13 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate c

8.4. Size:673K way-on
wml28n60f2 wmk28n60f2 wmn28n60f2 wmm28n60f2 wmj28n60f2.pdf

WML28N60F2, WM F2 MK28N60FWMN2 N60F2, WM F2 28N60F2, WMM28N MJ28N60F 600V 0.15 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET fferin

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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