WML4N90D1 Todos los transistores

 

WML4N90D1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WML4N90D1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 78 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm

Encapsulados: TO220F

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WML4N90D1 datasheet

 ..1. Size:1980K  way-on
wml4n90d1 wmk4n90d1 wmm4n90d1.pdf pdf_icon

WML4N90D1

WML4N90D1 WMK4N90D1 WMM4N90D1 900V 4A 2.9 N-ch Power MOSFET Description TO-220F TO-220 TO-263 WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction TAB in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very D G robust and RoHS compliant. G D S G S D S Features Typ.R =2.9

 0.1. Size:1434K  way-on
wmk4n90d1b wml4n90d1b wmm4n90d1b.pdf pdf_icon

WML4N90D1

WMK4N90D1B WML4N90D1B WMM4N90D1B 900V 4A 1.85 N-ch Power MOSFET Description TO-263 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D And it is very robust and RoHS compliant. G G S D S G D S

 9.1. Size:1584K  way-on
wmaa4n65d1b wmk4n65d1b wml4n65d1b wmo4n65d1b.pdf pdf_icon

WML4N90D1

WMAA4N65D1B WMK4N65D1B WML4N65D1B WMO4N65D1B 650V 4A 2.2 N-ch Power MOSFET Description TO-220F TO-220 WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power G G density and high efficiency. And it is very D D S S robust and RoHS compliant. TO-252 TO-251-L9.4 TAB Featur

 9.2. Size:1105K  way-on
wml4n100d1.pdf pdf_icon

WML4N90D1

WML4N100D1 1000V 4A 2.2 N-ch Power MOSFET Description TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. Features G V =1050V@T DS jmax D S Typ.R =2.2 @V =10V DS(on) G

Otros transistores... WMM36N65C4 , WMJ36N65C4 , WML36N65F2 , WMK36N65F2 , WMN36N65F2 , WMM36N65F2 , WMJ36N65F2 , WML4N100D1 , 4N60 , WMK4N90D1 , WMM4N90D1 , WML50P04TS , WML53N60C4 , WMK53N60C4 , WMN53N60C4 , WMM53N60C4 , WMJ53N60C4 .

History: WMM4N90D1 | PN4302 | PN4303

 

 

 

 

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