WML4N90D1. Аналоги и основные параметры
Наименование производителя: WML4N90D1
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 78 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3.5 Ohm
Тип корпуса: TO220F
Аналог (замена) для WML4N90D1
- подборⓘ MOSFET транзистора по параметрам
WML4N90D1 даташит
wml4n90d1 wmk4n90d1 wmm4n90d1.pdf
WML4N90D1 WMK4N90D1 WMM4N90D1 900V 4A 2.9 N-ch Power MOSFET Description TO-220F TO-220 TO-263 WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction TAB in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very D G robust and RoHS compliant. G D S G S D S Features Typ.R =2.9
wmk4n90d1b wml4n90d1b wmm4n90d1b.pdf
WMK4N90D1B WML4N90D1B WMM4N90D1B 900V 4A 1.85 N-ch Power MOSFET Description TO-263 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D And it is very robust and RoHS compliant. G G S D S G D S
wmaa4n65d1b wmk4n65d1b wml4n65d1b wmo4n65d1b.pdf
WMAA4N65D1B WMK4N65D1B WML4N65D1B WMO4N65D1B 650V 4A 2.2 N-ch Power MOSFET Description TO-220F TO-220 WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power G G density and high efficiency. And it is very D D S S robust and RoHS compliant. TO-252 TO-251-L9.4 TAB Featur
wml4n100d1.pdf
WML4N100D1 1000V 4A 2.2 N-ch Power MOSFET Description TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. Features G V =1050V@T DS jmax D S Typ.R =2.2 @V =10V DS(on) G
Другие MOSFET... WMM36N65C4 , WMJ36N65C4 , WML36N65F2 , WMK36N65F2 , WMN36N65F2 , WMM36N65F2 , WMJ36N65F2 , WML4N100D1 , 4N60 , WMK4N90D1 , WMM4N90D1 , WML50P04TS , WML53N60C4 , WMK53N60C4 , WMN53N60C4 , WMM53N60C4 , WMJ53N60C4 .
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