WMN53N65F2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMN53N65F2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 350 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 VQgⓘ - Carga de la puerta: 58 nC
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 115 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.078 Ohm
Paquete / Cubierta: TO262
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WMN53N65F2 Datasheet (PDF)
wml53n65f2 wmk53n65f2 wmn53n65f2 wmm53n65f2 wmj53n65f2.pdf
WML53N MK53N65FN65F2, WM F2 WMN , WMM53N MJ53N65FN53N65F2, N65F2, WM F2 650V 0.062 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET f
wml53n65c4 wmk53n65c4 wmn53n65c4 wmm53n65c4 wmj53n65c4.pdf
WML53N MK53N65CN65C4, WM C4 WMN53N65C4, WMM53N MJ53N65CN65C4, WM C4 650V 0.06 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate
wml53n60c4 wmk53n60c4 wmn53n60c4 wmm53n60c4 wmj53n60c4.pdf
WML53N MK53N60CN60C4, WM C4 WMN53N60C4, WMM53N MJ53N60CN60C4, WM C4 600V 0.06 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate
wml53n60f2 wmk53n60f2 wmn53n60f2 wmm53n60f2 wmj53n60f2.pdf
WML53N MK53N60FN60F2, WM F2 WMN , WMM53N MJ53N60FN53N60F2, N60F2, WM F2 600V 0.062 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET f
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD