WMN53N65F2 - Даташиты. Аналоги. Основные параметры
Наименование производителя: WMN53N65F2
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 350 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 115 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.078 Ohm
Тип корпуса: TO262
Аналог (замена) для WMN53N65F2
WMN53N65F2 Datasheet (PDF)
wml53n65f2 wmk53n65f2 wmn53n65f2 wmm53n65f2 wmj53n65f2.pdf

WML53N MK53N65FN65F2, WM F2 WMN , WMM53N MJ53N65FN53N65F2, N65F2, WM F2 650V 0.062 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET f
wml53n65c4 wmk53n65c4 wmn53n65c4 wmm53n65c4 wmj53n65c4.pdf

WML53N MK53N65CN65C4, WM C4 WMN53N65C4, WMM53N MJ53N65CN65C4, WM C4 650V 0.06 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate
wml53n60c4 wmk53n60c4 wmn53n60c4 wmm53n60c4 wmj53n60c4.pdf

WML53N MK53N60CN60C4, WM C4 WMN53N60C4, WMM53N MJ53N60CN60C4, WM C4 600V 0.06 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate
wml53n60f2 wmk53n60f2 wmn53n60f2 wmm53n60f2 wmj53n60f2.pdf

WML53N MK53N60FN60F2, WM F2 WMN , WMM53N MJ53N60FN53N60F2, N60F2, WM F2 600V 0.062 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET f
Другие MOSFET... WMJ53N60F2 , WML53N65C4 , WMK53N65C4 , WMN53N65C4 , WMM53N65C4 , WMJ53N65C4 , WML53N65F2 , WMK53N65F2 , IRFZ48N , WMM53N65F2 , WMJ53N65F2 , WML6N100D1 , WML7N80D1 , WML80R160S , WMK80R160S , WMN80R160S , WMM80R160S .
History: NVD5484NL | IPP80P04P4L-04 | STD4NK60Z-1 | PHU108NQ03LT | AP98T03GS | AP9469GM | STS8202
History: NVD5484NL | IPP80P04P4L-04 | STD4NK60Z-1 | PHU108NQ03LT | AP98T03GS | AP9469GM | STS8202



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