WMJ80R160S Todos los transistores

 

WMJ80R160S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMJ80R160S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 24 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 44 nS

Cossⓘ - Capacitancia de salida: 56 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: TO247

 Búsqueda de reemplazo de WMJ80R160S MOSFET

- Selecciónⓘ de transistores por parámetros

 

WMJ80R160S datasheet

 ..1. Size:927K  way-on
 wml80r160s wmk80r160s wmn80r160s wmm80r160s wmj80r160s.pdf pdf_icon

WMJ80R160S

WML80R160S, WMK80R160S WMN80R160S, WMM80R160S, WMJ80R160S 800V 0.16 Super Junction Power MOSFET Description WMOSTM S is Wayon s new generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM S is TO-220F TO-262 TO-220 suitable for applications

 8.1. Size:672K  way-on
 wml80r480s wmo80r480s wmk80r480s wmn80r480s wmm80r480s wmj80r480s.pdf pdf_icon

WMJ80R160S

WML R480S, WM 0S L80R480S, WMO80R MK80R480 WMN , WMM80R MJ80R480 N80R480S, R480S, WM 0S 800V 0.4 S T Super Junction Power MOSFET Descrip ption WMOSTM S is Way new generation super yon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low gate charge performan WMOST

 8.2. Size:657K  way-on
 wml80r350s wmk80r350s wmn80r350s wmm80r350s wmj80r350s.pdf pdf_icon

WMJ80R160S

WML80R MK80R350 R350S, WM 0S WMN , WMM80R MJ80R350 N80R350S, R350S, WM 0S 800V 0.27 S unction P MOSFET 0 Super Ju Power M T Descrip ption WMOSTM S is Way new generation super yon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low gate charge performan WMOSTM S i

 8.3. Size:656K  way-on
 wml80r260s wmk80r260s wmn80r260s wmm80r260s wmj80r260s.pdf pdf_icon

WMJ80R160S

WML80R MK80R260 R260S, WM 0S WMN , WMM80R MJ80R260 N80R260S, R260S, WM 0S 800V 0.22 S unction Power M T Super Ju MOSFET Descrip ption WMOSTM S is Way new generation super yon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low gate charge performan WMOSTM S is

MOSTRAR MÁS

Otros transistores... WMM53N65F2 , WMJ53N65F2 , WML6N100D1 , WML7N80D1 , WML80R160S , WMK80R160S , WMN80R160S , WMM80R160S , AON7403 , WML80R260S , WMK80R260S , WMN80R260S , WMM80R260S , WMJ80R260S , WML80R350S , WMK80R350S , WMN80R350S .

History: MMBF4392 | WMM80R350S | WMN53N65C4 | TK7J90E | ZXMP6A13GTA | KHB1D2N80D

 

 

 

 

↑ Back to Top
.