WMJ80R160S - описание и поиск аналогов

 

WMJ80R160S. Аналоги и основные параметры

Наименование производителя: WMJ80R160S

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 250 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 44 ns

Cossⓘ - Выходная емкость: 56 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm

Тип корпуса: TO247

Аналог (замена) для WMJ80R160S

- подборⓘ MOSFET транзистора по параметрам

 

WMJ80R160S даташит

 ..1. Size:927K  way-on
wml80r160s wmk80r160s wmn80r160s wmm80r160s wmj80r160s.pdfpdf_icon

WMJ80R160S

WML80R160S, WMK80R160S WMN80R160S, WMM80R160S, WMJ80R160S 800V 0.16 Super Junction Power MOSFET Description WMOSTM S is Wayon s new generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM S is TO-220F TO-262 TO-220 suitable for applications

 8.1. Size:672K  way-on
wml80r480s wmo80r480s wmk80r480s wmn80r480s wmm80r480s wmj80r480s.pdfpdf_icon

WMJ80R160S

WML R480S, WM 0S L80R480S, WMO80R MK80R480 WMN , WMM80R MJ80R480 N80R480S, R480S, WM 0S 800V 0.4 S T Super Junction Power MOSFET Descrip ption WMOSTM S is Way new generation super yon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low gate charge performan WMOST

 8.2. Size:657K  way-on
wml80r350s wmk80r350s wmn80r350s wmm80r350s wmj80r350s.pdfpdf_icon

WMJ80R160S

WML80R MK80R350 R350S, WM 0S WMN , WMM80R MJ80R350 N80R350S, R350S, WM 0S 800V 0.27 S unction P MOSFET 0 Super Ju Power M T Descrip ption WMOSTM S is Way new generation super yon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low gate charge performan WMOSTM S i

 8.3. Size:656K  way-on
wml80r260s wmk80r260s wmn80r260s wmm80r260s wmj80r260s.pdfpdf_icon

WMJ80R160S

WML80R MK80R260 R260S, WM 0S WMN , WMM80R MJ80R260 N80R260S, R260S, WM 0S 800V 0.22 S unction Power M T Super Ju MOSFET Descrip ption WMOSTM S is Way new generation super yon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low gate charge performan WMOSTM S is

Другие MOSFET... WMM53N65F2 , WMJ53N65F2 , WML6N100D1 , WML7N80D1 , WML80R160S , WMK80R160S , WMN80R160S , WMM80R160S , AON7403 , WML80R260S , WMK80R260S , WMN80R260S , WMM80R260S , WMJ80R260S , WML80R350S , WMK80R350S , WMN80R350S .

History: AOI1N60L | IRF8304M

 

 

 

 

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