WMJ80R160S - Даташиты. Аналоги. Основные параметры
Наименование производителя: WMJ80R160S
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 44 ns
Cossⓘ - Выходная емкость: 56 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
Тип корпуса: TO247
Аналог (замена) для WMJ80R160S
WMJ80R160S Datasheet (PDF)
wml80r160s wmk80r160s wmn80r160s wmm80r160s wmj80r160s.pdf

WML80R160S, WMK80R160S WMN80R160S, WMM80R160S, WMJ80R160S 800V 0.16 Super Junction Power MOSFET DescriptionWMOSTM S is Wayons new generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM S is TO-220F TO-262 TO-220 suitable for applications
wml80r480s wmo80r480s wmk80r480s wmn80r480s wmm80r480s wmj80r480s.pdf

WML R480S, WM 0S L80R480S, WMO80R MK80R480WMN , WMM80R MJ80R480N80R480S, R480S, WM 0S 800V 0.4 S TSuper Junction Power MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOST
wml80r350s wmk80r350s wmn80r350s wmm80r350s wmj80r350s.pdf

WML80R MK80R350R350S, WM 0S WMN , WMM80R MJ80R350N80R350S, R350S, WM 0S 800V 0.27 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S i
wml80r260s wmk80r260s wmn80r260s wmm80r260s wmj80r260s.pdf

WML80R MK80R260R260S, WM 0S WMN , WMM80R MJ80R260N80R260S, R260S, WM 0S 800V 0.22 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S is
Другие MOSFET... WMM53N65F2 , WMJ53N65F2 , WML6N100D1 , WML7N80D1 , WML80R160S , WMK80R160S , WMN80R160S , WMM80R160S , HY1906P , WML80R260S , WMK80R260S , WMN80R260S , WMM80R260S , WMJ80R260S , WML80R350S , WMK80R350S , WMN80R350S .
History: AP4800GM | ELM34417AA | WSP4067B | IRFI7536G | BSC010N04LS6 | WMJ90N60F2
History: AP4800GM | ELM34417AA | WSP4067B | IRFI7536G | BSC010N04LS6 | WMJ90N60F2



Список транзисторов
Обновления
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