WMJ80R160S Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WMJ80R160S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 44 ns
Cossⓘ - Выходная емкость: 56 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
Тип корпуса: TO247
- подбор MOSFET транзистора по параметрам
WMJ80R160S Datasheet (PDF)
wml80r160s wmk80r160s wmn80r160s wmm80r160s wmj80r160s.pdf

WML80R160S, WMK80R160S WMN80R160S, WMM80R160S, WMJ80R160S 800V 0.16 Super Junction Power MOSFET DescriptionWMOSTM S is Wayons new generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM S is TO-220F TO-262 TO-220 suitable for applications
wml80r480s wmo80r480s wmk80r480s wmn80r480s wmm80r480s wmj80r480s.pdf

WML R480S, WM 0S L80R480S, WMO80R MK80R480WMN , WMM80R MJ80R480N80R480S, R480S, WM 0S 800V 0.4 S TSuper Junction Power MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOST
wml80r350s wmk80r350s wmn80r350s wmm80r350s wmj80r350s.pdf

WML80R MK80R350R350S, WM 0S WMN , WMM80R MJ80R350N80R350S, R350S, WM 0S 800V 0.27 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S i
wml80r260s wmk80r260s wmn80r260s wmm80r260s wmj80r260s.pdf

WML80R MK80R260R260S, WM 0S WMN , WMM80R MJ80R260N80R260S, R260S, WM 0S 800V 0.22 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S is
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: PF5102 | STP20NM60FP | 2N6760JANTXV | IRLML9301TRPBF | 2N7002BKS | RU7550S | AUIRFZ34N
History: PF5102 | STP20NM60FP | 2N6760JANTXV | IRLML9301TRPBF | 2N7002BKS | RU7550S | AUIRFZ34N



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
pa110bda | 2sb1243 | a1123 transistor | skd502t datasheet | svf7n65f | 2sc1419 datasheet | 2n4249 datasheet | tip130