WMO90R500S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO90R500S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 138 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 31 nS
Cossⓘ - Capacitancia de salida: 32 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Encapsulados: TO252
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WMO90R500S datasheet
wml90r500s wmo90r500s wmk90r500s wmn90r500s wmm90r500s wmj90r500s .pdf
WML R500S, WM 0S L90R500S, WMO90R MK90R500 WMN , WMM90R MJ90R500 N90R500S, R500S, WM 0S 900V 0.41 S unction Power M T Super Ju MOSFET Descrip ption WMOSTM S is Way new generation super yon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low gate charge performan
wmm90r1k5s wmn90r1k5s wmk90r1k5s wml90r1k5s wmp90r1k5s wmo90r1k5s.pdf
WMM9 1K5S, WM 5S 90R1K5S, WMN90R1 MK90R1K5 WML9 1K5S, WM 5S 90R1K5S, WMP90R1 MO90R1K5 900V 1.28 S unction Power M T Super Ju MOSFET Descrip ption WMOSTM S is Way new generation super yon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low gate charge performan WMO
wmo90p04ts.pdf
WMO90P04TS 40V P-Channel Enhancement Mode Power MOSFET Description WMO90P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G TO-252 V = -40V, I = -95A DS D R
Otros transistores... WMM90R260S, WMJ90R260S, WML90R360S, WMK90R360S, WMN90R360S, WMM90R360S, WMJ90R360S, WML90R500S, IRFB4227, WMK90R500S, WMN90R500S, WMM90R500S, WMJ90R500S, WMLL010N04LG4, WMLL013N08HGS, WMLL014N06HG4, WMLL017N10HGS
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