WMO90R500S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO90R500S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 138 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 31 nS
Cossⓘ - Capacitancia de salida: 32 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Paquete / Cubierta: TO252
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WMO90R500S Datasheet (PDF)
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WMO90P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO90P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures GTO-252 V = -40V, I = -95A DS DR
wmo90n02t1.pdf

WMO90N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionWMO90N02T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 20V, I = 90A DS DTO-252R
Otros transistores... WMM90R260S , WMJ90R260S , WML90R360S , WMK90R360S , WMN90R360S , WMM90R360S , WMJ90R360S , WML90R500S , AON6414A , WMK90R500S , WMN90R500S , WMM90R500S , WMJ90R500S , WMLL010N04LG4 , WMLL013N08HGS , WMLL014N06HG4 , WMLL017N10HGS .
History: NCE40H32LL | STB25NM50N-1 | SIS472ADN | NCEP1520 | IRFR310T | WPM3407
History: NCE40H32LL | STB25NM50N-1 | SIS472ADN | NCEP1520 | IRFR310T | WPM3407



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