WMO90R500S MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO90R500S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 138 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 25 nC
trⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 32 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO252
WMO90R500S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO90R500S Datasheet (PDF)
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wmo90p04ts.pdf
WMO90P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO90P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures GTO-252 V = -40V, I = -95A DS DR
wmo90n02t1.pdf
WMO90N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionWMO90N02T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 20V, I = 90A DS DTO-252R
wmo90p03ts.pdf
WMO90P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMO90P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = - 30V, I = - 90A DS DTO-252R
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
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