WMM020N06HG4 Todos los transistores

 

WMM020N06HG4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMM020N06HG4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 227 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 258 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 29 nS

Cossⓘ - Capacitancia de salida: 2257 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm

Encapsulados: TO263

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WMM020N06HG4 datasheet

 ..1. Size:665K  way-on
 wmm020n06hg4.pdf pdf_icon

WMM020N06HG4

WMM020N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WMM020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G S device is well suited for high efficiency fast switching applications. TO-263 Features V = 60V, I = 25

 7.1. Size:694K  way-on
 wmm020n10hgs.pdf pdf_icon

WMM020N06HG4

WMM020N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMM020N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G S device is well suited for high efficiency fast switching applications. TO-263 Features V = 100V, I = 280A

 9.1. Size:708K  way-on
 wmm028n10hgs.pdf pdf_icon

WMM020N06HG4

WMM028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMM028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G S device is well suited for high efficiency fast switching applications. TO-263 Features V = 100V, I = 257A

 9.2. Size:678K  way-on
 wmm028n10hg2.pdf pdf_icon

WMM020N06HG4

WMM028N10HG2 100V N-Channel Enhancement Mode Power MOSFET Description WMM028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device G is well suited for high efficiency fast switching applications. S TO-263 Features V =100V, I = 245

MOSTRAR MÁS

Otros transistores... WMLL020N10HGS , WMLL020NV8HGS , WMLL025N10HGS , WMLL030N12HGS , WMLL040N15HG2 , WMLL065N15HG2 , WMLL099N20HG2 , WMM015N08HGS , AO3401 , WMM020N10HGS , WMM023N08HGS , WMM028N10HG2 , WMM028N10HGS , WMM030N06HG4 , WMM036N12HGS , WMM037N10HGS , WMM040N08HGS .

History: SI4062DY

 

 

 

 

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