Справочник MOSFET. WMM020N06HG4

 

WMM020N06HG4 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMM020N06HG4
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 227 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 258 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 102 nC
   tr ⓘ - Время нарастания: 29 ns
   Cossⓘ - Выходная емкость: 2257 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0021 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для WMM020N06HG4

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMM020N06HG4 Datasheet (PDF)

 ..1. Size:665K  way-on
 wmm020n06hg4.pdf pdf_icon

WMM020N06HG4

WMM020N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMM020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 60V, I = 25

 7.1. Size:694K  way-on
 wmm020n10hgs.pdf pdf_icon

WMM020N06HG4

WMM020N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM020N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications.TO-263Features V = 100V, I = 280A

 9.1. Size:708K  way-on
 wmm028n10hgs.pdf pdf_icon

WMM020N06HG4

WMM028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 257A

 9.2. Size:678K  way-on
 wmm028n10hg2.pdf pdf_icon

WMM020N06HG4

WMM028N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Gis well suited for high efficiency fast switching applications. STO-263Features V =100V, I = 245

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMLL020N10HGS , WMLL020NV8HGS , WMLL025N10HGS , WMLL030N12HGS , WMLL040N15HG2 , WMLL065N15HG2 , WMLL099N20HG2 , WMM015N08HGS , AO3400 , WMM020N10HGS , WMM023N08HGS , WMM028N10HG2 , WMM028N10HGS , WMM030N06HG4 , WMM036N12HGS , WMM037N10HGS , WMM040N08HGS .

History: LNG06R079 | MTP15N06LFI

 

 
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