WMM020N10HGS Todos los transistores

 

WMM020N10HGS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMM020N10HGS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 390.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 280 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 88 nS
   Cossⓘ - Capacitancia de salida: 2120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
   Paquete / Cubierta: TO263
 

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WMM020N10HGS Datasheet (PDF)

 ..1. Size:694K  way-on
 wmm020n10hgs.pdf pdf_icon

WMM020N10HGS

WMM020N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM020N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications.TO-263Features V = 100V, I = 280A

 7.1. Size:665K  way-on
 wmm020n06hg4.pdf pdf_icon

WMM020N10HGS

WMM020N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMM020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 60V, I = 25

 9.1. Size:708K  way-on
 wmm028n10hgs.pdf pdf_icon

WMM020N10HGS

WMM028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 257A

 9.2. Size:678K  way-on
 wmm028n10hg2.pdf pdf_icon

WMM020N10HGS

WMM028N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Gis well suited for high efficiency fast switching applications. STO-263Features V =100V, I = 245

MOSTRAR MÁS

Otros transistores... WMLL020NV8HGS , WMLL025N10HGS , WMLL030N12HGS , WMLL040N15HG2 , WMLL065N15HG2 , WMLL099N20HG2 , WMM015N08HGS , WMM020N06HG4 , 12N60 , WMM023N08HGS , WMM028N10HG2 , WMM028N10HGS , WMM030N06HG4 , WMM036N12HGS , WMM037N10HGS , WMM040N08HGS , WMM040N15HG2 .

History: TMA2N60H | STT04N20 | BSC0906NS | WNM2016-3 | SM6032NSG | 2SK2793 | BSC0921NDI

 

 
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